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        CN

        Infrared Detector

        紅外探測器覆蓋0.8μm-100μm的所有探測,擁有高響應度和高信噪比,能通過多種制冷方式大幅降低噪聲,
        因此被廣泛用于紅外光譜、氣體分析、火焰探測、溫度傳感與各類航天、軍工和科學研究領域。

        我們提供的紅外探測器材料種類豐富,既包含Ge、PbS、PbSe、InAs、InSb、MCT等光子型探測器件,
        也包含熱釋電、熱電堆等熱型探測器件。

        InGaAs PD

        GaAs-PD is a near-infrared photodiode, which can be used for optical communications, security, and light barriers. The products we provide include chips, built-in preamplifiers, arrays, etc., and we also provide color filters and optical fiber interface options.

        PbS

        Pump laser components include: laser pump lamp, laser pump cavity, laser resonant cavity, gain medium.

        MCT

        InSb detector is a photonic mid-wave infrared device with a spectral response range of 1μm-5.5μm. Compared with lead salt detectors such as PbS and PbSe, it has a wider spectrum, higher response speed and higher signal-to-noise ratio.
        Application: gas analysis, spectrum analysis, radiometer, infrared microscopy, etc.

        GaAs PD

        The one-dimensional or two-dimensional array composed of multiple PD pixels, with high responsiveness consistency and low crosstalk among the pixels, is ideal for simultaneous capture of dynamic light spots or applications of multiple wavelengths, when reducing the center distance of the pixels, the average cost of a single pixel can come down.
        Applications: spectrometers, spot position measurements, computed tomography, high speed photometers, and various medical and biochemical analytical instruments.

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